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band Engineering approach to AlN/GaN/InN Heterojunction Devices” by. Asif
Khan, J.W. Frequency Noise in Gallium Nitride Field Effect Transistors” by S.L.
.. insulating gate HEMT in 1999 (see the highlited papers 12, 13 and 24 below).
acceptance of bank credit, fractional reserve and paper currency, enabling an
sharing, diversification all occurred within the framework of trust, reciprocity and
(15) Muhammad Anas Zarqa "Istisna Financing of Infrastructure Projects"in